TEK-VAC INDUSTRIES Inc.
TEK-VAC INDUSTRIES, Inc. offers forty years of high vacuum and ultra-high vacuum technology experience to our customers in the form of production and R&D semiconductor process equipment. We offer systems which range from simple manual operation to fully automated turnkey. Our expertise includes design of operating system modes in broad temperature and pressure ranges, which provide accurate and reliable reproducibility.
- (631) 436-5100
- (631) 436-5154
- 176 Expressway Dr. South
Brentwood, NY 11717
United States
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Gas Metering Valves
VARI-VAC
The Tek-Vac Industries' VARI-VAC® is a smooth acting, bellows sealing gas metering valve available with manual, motor driven, solenoid, or electropneumatic controlling actuators.
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Chemical Vaper Deposition R&D System
MODEL CVD-300-M
High Temperature, 1080 C (24" Hot Zone: 126 Cubic In.) High Purity Quartz Tube with Water Cooled End Caps. Broad Pressure Range of Atmosphere to 10-3 Torr. Upgradable to High Vacuum. Computer Interfaceable. Small Footprint (26" x 48"), Portable with caster mounts.
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Liquid Phase Epitaxy Systems
MODEL LPE-3750 / 4750
The Tek-Vac LPE-3750 / 4750 Liquid-Phase Epitaxial Reactor utilizes a graphite slider boat technique to produce high quality semiconductors at high throughput rates. Automated Control provides uniform processing from run to run. An IBM PC, or compatible, uses Graphic Displays to develop process recipes and procedures. The LPE-3750 / 4750 can operate in a stand-alone mode.
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Vacuum Test & Storage Chambers
Model R43 Altitude Test Chamber, Model S222-SE
Universal Application Low Pressure Testing and Processing Chambers
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High Density Plasma Etching System for 200mm substrates
Model DRIE-1200-LL-ICP
Single process chamber for high rate plasma etching of 200mm wafers. Loadlocked. Stainless steel construction. Capabilities of smaller, multiple wafer throughput. Substrate materials include (but are not limited to) silicon, silicon oxynitrides, SiC, SiGe, Aluminum, and III-V compounds including GaAs, GaN, GaP, and InP. Stable plasma generation capabilities to below 1 mTorr. Five, Six, or Eight gas mass flow controllers are standard. Expanded or reduced numbers are available upon request.
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Various Engineering, Design & Manufacturing Services
GAS DISTRIBUTION
Tek-Vac will fabricate equipment subassemblies to customer specifictionsViewed here are two process gas distribution systems including mass flow controllers, isolation valves, and stainless steel manifolding. All fittings are metal sealing and all welds are full penetration.
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Photoresist Curing System
MODEL PRC-2000
A Compact Vacuum Bake Module, Ideal for Processing up to 12" x 12" wafers.Digital temperature control with P.I.D and auto tune features for precision control. Adjustable vacuum chucking pressure. Timed thermal contact provides excellent reproducibility. Automatic and manual versions. Safety interlocked Various fixture plates are available for multiple substrate processing.
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Plasma CVD & Reactive Ion Etching System
MODEL DRIE-1100-LL-ECR
The Tek-Vac DRIE-1100-LL-ECR series systems are designed for both high-density plasma chemical vapor deposition and reactive ion etching of sub-micron integrated circuits, optical devices and RF microwave electron devices.
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Gloveboxes & Gas Purification System
MODEL 440
Provides an inert environment for handling of highly reactive materials.Hermetically sealed chambers prohibitive to moisture and oxygen influx.Vacuum load-lock transfer chamber to avoid contamination.Optional purifier and regeneration systems are available.Three models and many options to suit your requirements.
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Multichamber Plasma CVD & RIE Processing Systems
Model MPS-2000
Accurate linear wafer transporter with low particulate generation. Automated options with programmable controls. Safety interlocked with local and global interfaces. Base pressures to 10-8 torr. Optional clean room load lock entry port. Option for inductively coupled plasma processing is available. Complete and ready to operate.
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Metal-Organic Compound Chemical Vapor Deposition
Model MOCVD-500-A
For Experimental growth of quality epitaxial layers III-V, II-VI compounds. Multi-Layer structures. Directly heated silicon carbide coated, high purity graphite or PBN susceptor. Low mass thermocouple probe immersed into susceptor. Broad temperature and pressure application. Highest quality materials utilized throughout.
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Star Cluster Systems
MODEL PDS-6000
One centrally located robot with four access ports. Four process chambers, one central loadlock, and one clean room load lock. Two 330 liter/second turbomolecular pump serving all process chambers. Options of 104 CFM Roots Blowers each backed by a 27 CFM rotary vane pumps.
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R&D Microwave PECVD System
Model PECVD-60-M
Retrofittable with RF-DC-Laser Ablation Modules. High Temperature Substrate Heating, 4" Diameter. High Power Magnetron Head, 600W Microprocessor Temperature Control. Standard Model equipped to handle four gas inputs, expandable. Adaptable for RF or DC Plasma. Top Loading, Compact Footprint. Broad Operating Pressure Range (10-4 to 760 torr).
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Ultra-High Vacuum CVD Process System
Model UHV-CVD-5000
ur Ultra-High Vacuum CVD system is utilized for multi-wafer processing of doped and intrinsic high quality epitaxial films, including materials such as Silicon Germanium.End products include SiGe components (RF & microwave devices, amplifiers, switches, discrete HBTs, and low noise MMICs) utilized in wireless communications applications such as cellular phones, pagers, local area networks, telemetry and sensors.
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Power Supply, Flow Control & Flow Readout Device
FLO-MASTER FM-2001
A POWER SUPPLY, FLOW CONTROL, AND FLOW READOUT DEVICE, INTENDED TO CONTROL MOST COMMERCIALLY AVAILABLE MASS FLOW CONTROLLERS.
