Materials Development Corporation
MDC continues to improve both the hardware and software for C-V measurements and analyses of semiconductor devices. Taking full advantage of the latest C-V measuring instruments and more powerful computers, MDC offers the widest variety of C-V and I-V measurement systems available.
- 818.700.8290
- (775) 854-2585
- info@mdc4cv.com
- 21541 Nordhoff St.
#B
Chatsworth, CA 91311
United States
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Copper Diffusion TestSystems
Materials Development Corporation
MDC announces the addition of software and hardware for copper diffusion studies to its CSM/Win suite of semiconductor test systems and software. This new CSM/Win feature plays an important part in the development of processes and materials for the next advance in integrated circuit technology that employscopper as a conductor. Special Current-Voltage Bias-Temperature Stress (IV-BTS) software can measure the degradation of insulator quality due to copper diffusion.Multiple test sites can be stressed with a constant voltage while the current through each site is measured and recorded. The Current-Voltage Bias-Temperature Stress test supplements conventional MOS C-V measurements and Triangular Voltage Measurements (TVS) that are also employed in copper diffusion studies.
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Cryogenic Probe Station
CryoPro
Materials Development Corporation
The MDC Model 441 Cryogenic Probe Station is a cost effective alternative to high-priced vacuum based cryogenic probe stations. With up to five probes available and sample diameters up to six inches, the MDC Cryogenic Probe Station allows for electrical measurements at temperatures near liquid nitrogen levels (77K).
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C-V Plotters
Materials Development Corporation
MDC will tailor your CSM/Win Semiconductor Measurement System for your exact requirements. Choose the best capacitance meter, output device, and probe station for your needs. All CSM/Win C-V plotters feature the latest Dell Computers. The computer and capacitance meters are rackmounted in one compact enclosure. When ordered with a hot chuck or probe station, MDC can deliver a turnkey system of unparalleled performance.
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Four-Point Probe
Materials Development Corporation
Materials Development Corporation offers the complete line of Four Point Probe systems from AIT. Systems are available to measue up to 12" diameter (300 mm) wafers as well as specialty systems for Photovoltaic wafers and substrates. For more information on these systems, contact MDC.
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FPP Software
Four Point Probe
Materials Development Corporation
For use with a manual four point prober, the MDC FPP Software operates in a convenient, single screen that displays both measurement parameters and testresults. The FPP software can measure Resistivity, Conductivity, Resistance, Doping, Thickness, and SheetResistance when used with a compatible current source and voltmeter or SMU.
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Hot Chucks
Materials Development Corporation
Probe stations to suit all measurement requirementswhether production, engineering or research. See individual data sheets for more details.
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Mercury Probes
Materials Development Corporation
MERCURY PROBES are precision instruments that enable rapid, convenient, and non-destructive measurements of semiconductor samples by probing wafers with mercury to form contacts of well-defined area.
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ReferenceWafer
RW10
Materials Development Corporation
MDC presents the RW10 Reference Wafer. A range of capacitors, resistors and semiconductor devices can bemeasured to verify the repeatability and accuracy of measurement systems. The MDC Model RW10 Reference Wafer is not actually a "wafer". It has the shape of a wafer and it includes capacitors, resistors, MOS devices, and a junction device in a wafer configuration to allow rapid verification of proper operation for capacitance-voltage and current-voltage instrumentation.
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Semiconductor CharacterizationSystem
Keithley 4200
Materials Development Corporation
The MDC CSM/Win-4200 System integrates the extraordinary power of the CSM/Win softwarewith the power of the new Keithley 4200-SCS. Measure capacitance, voltage, and current down to sub-femtoamp levels.
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Software
Electrochemistry Tests
Materials Development Corporation
CyclicVoltammetry and Galvanostatic Charging are tests used throughout the industrial and scientific communities to study chemical reactions and behavior of electronic structures. They are extremely helpful in the monitoring of nano based dielectrics, used in super /ultra capacitors or self-assembled monolayers (SAMs). The Cyclic Voltammetry test applies a ramping voltage to a device and measures the resulting current. In acapacitor-like structure the current reveals loss in the dielectric as well as degradation over time. CyclicVoltammetry is used to characterize the performance of supercapacitors and ultracapacitors formed using various nano-technologies. It is also useful in the studies of self-assembled monolayers used for sensors.
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Software
Junction Measurement and Analysis
Materials Development Corporation
A comprehensive set of analyses for junction diode or Schottky barriers begins with C-V data gathering that adjusts the voltage step to the slope of the C-V characteristics. This assures an optimum set of C-Vdata whether the voltage range is small or large. Doping profile and resistivity profile are both available at the touch of a key. Plots of 1/C2 - V or Log(C) - Log (V+ phi) show doping uniformity and doping slope factor. Exclusive recalculation options allow adjustment of stray capacitance and area to facilitate calibration using a standard reference wafer of known doping or resistivity.
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Software
MOS C-V Measurement and Analysis
Materials Development Corporation
MOS capacitance-voltage measurement is one of the most common process monitoring diagnostics employed in device manufacturing. A vast amount of information can be derived from this simple test.
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Software
Dielectric Constant
Materials Development Corporation
The Dielectric Constant option allows the user to measure the dielectric constant of a wide range of materials. Simply input a test voltage (in accumulation), the area (or diameter), and stray capacitance to determine the relative dielectric constant.
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Software
Interface Trap Density Analysis Option
Materials Development Corporation
MDC offers interface trap density analysis using both the Conductance-Frequency and Quasi-statictechniques. The Conductance-Frequency method is recommended for fine-tuning of processes where the highest resolution is needed. The Quasi-static technique is recommended where moderate to high levels of interface traps are monitored, such as in radiation damage studies. Requires quasi-static option or variable frequency option.
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Software
Production Triangular Voltage Sweep (TVS) Option
Materials Development Corporation
In traditional TVS measurements, the operator must select the end points of the mobile ion peak todetermine the area to analyze. Though the selection of these points is a simple matter for the operator, the required input precludes using this technique in asemi-autonomous production environment. The goal of TVS Production testing is the rapid determination of mobile charge concentration with little or no operator input. The test methodology must be compatible with production environments where accuracy, easeof use, and minimum operator involvement are of paramount concern. Also, the possibility of automated wafer handling must be considered.
