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Solid State PIN Diode Transfer Switch, 100 MHz to 18 GHz
P9400C
The Keysight P9400C solid state PIN diode transfer switch offers outstanding performance in terms of port-to-port isolation, switching speed and low insertion loss over a broad operating frequency range of 100 MHz to 18 GHz. The P9400C is particularly well suited for ultra-fast RF and microwave switching applications in instrumentation, communications, radar, switch matrices and various other test systems where high isolation, speed and lifetime of a switch is critical.
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Solid State PIN Diode Transfer Switch, 100 MHz to 8 GHz
P9400A
The Keysight P9400A solid state PIN diode transfer switch offers outstanding performance in terms of port-to-port isolation, switching speed and low insertion loss over a broad operating frequency range of 100 MHz to 8 GHz. The P9400A is particularly well-suited for ultra-fast RF and microwave switching applications in instrumentation, communications, radar, switch matrices and various other test systems where high isolation, speed and lifetime of a switch are critical.
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E & W-Band PIN Diode Waveguide Switches
Fairview Microwave’s single-pole single-throw (SPST) and double-pole double-throw (DPDT) PIN diode waveguide switches feature fully integrated WR-10 and WR-12 waveguide ports and cover popular E-band (60 to 90 GHz) and W-band (75 to 110 GHz) frequencies. Switch circuits integrate low loss Fin-line assemblies with high performance GaAs beam-lead diodes that results in 4 dB insertion loss, greater than 25 dB of Isolation and fast switching speed < 300 nsec.
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PIN Photodiode
PIN photodiode is a kind of photo detector, it can convert optical signals into electrical signals.This technology was invented in the latest of 1950's. There are three regions in this type of diode. There is a p-region an intrinsic region and an n-region. The p-region and n-region are comparatively heavily doped than the p-region and n-region of usual p-n diodes. The width of the intrinsic region should be larger than the space charge width of a normal p-n junction. The PIN photo diode operates with an applied reverse bias voltage and when the reverse bias is applied, the space charge region must cover the intrinsic region completely. Electron hole pairs are generated in the space charge region by photon absorption. The switching speed of frequency response of photo diode is inversely proportional to the life time. The switching speed can be enhanced by a small minority carrier lifetime. For the photo detector applications where the speed of response is important, the depletion region width should be made as large as possible for small minority carrier lifetime as a result the switch speed also increases.
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Switch Drivers
Macom Technology Solutions Holdings Inc.
MACOM’s switch drivers bridge the gap between digital control signals and the analog voltages and currents required to drive our extensive family of RF, microwave and millimeter wave PIN diode and FET switches.
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5G Switch LNA Modules
Macom Technology Solutions Holdings Inc.
MACOM offers a complete portfolio of high-power switch and LNA modules to cover many sizes and classes of 5G base stations, including Macro Cell, Small Cell, and massive-MIMO AAS in frequency bands up to 6GHz. SOI-based switch modules with up to 20W LTE power handling are extensively used in mMIMO and Small Cell radios, and MACOM proprietary PIN diode Switch modules with up to 160W LTE power handling are widely deployed in Macro radios. Featuring ultra-broadband, low noise figure and excellent power handling and reliability, the family of Switch LNA modules are also well suited for a variety of TDD based communication systems in commercial and military applications.
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High Power Switch and Bias Module
Macom Technology Solutions Holdings Inc.
MACOM’s High-Power Switch and Bias modules are extensively used in 4G and 5G TDD base stations as well as aerospace and defense applications. The PIN Diode Switch features high power handling, low insertion loss, and super board band performance. The integrated bias controller utilizes a boost circuit and provide the driver circuitry to the switch. The modules require only a single 5 V supply, and a single TX / RX control signal which greatly reduced the customer design complexity.
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Switched Filter Banks
Switched Filter Banks typically include multiple filter topologies, including PIN diode and MMIC switch sub-circuits to achieve operational bandwidths of greater than 3 octaves. Pin Diode Based Switched Filter Banks provide the highest level of signal isolation, higher operating power levels, and lower insertion loss and achieve switching speeds of < 40 nanoseconds. GaAs MMIC Based Switched Filter Banks provide switching times as low as 10 nanoseconds with very low power consumption and have the inherent advantage of supporting multi-octave frequency bands with extremely low power consumption.
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Switches-DPDT
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-Limiter
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SP3T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SP4T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SP5T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SP6T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SP8T
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SPDT
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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Switches-SPST
Macom Technology Solutions Holdings Inc.
At MACOM we offer an extensive collection of switches covering multiple commercial and aerospace and defense markets. Our product portfolio has a broad frequency spectrum from DC to 70 GHz. Our silicon Heterolithic Microwave Integrated Circuit (HMIC) PIN diode process is ideal for high power and broadband switches operating from 50 MHz to 26 GHz. Our AlGaAs PIN diode process can extend the upper frequency range of our switch die beyond 70 GHz and is ideal for instrumentation and radar applications. Our GaAs pHEMT and MESFET technology is ideal for fast switching and low control voltage switches optimized for both narrow band and broadband applications. Our 75 Ohm absorptive switches are designed specifically for demanding CATV, FTTx and DBS Infrastructure and CPE applications.
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SIL Reed Relays
Series 105
• SoftCenter™ construction• Highest quality instrumentation grade switches• Encapsulated in a plastic package with internal mu-metal magnetic screen• Wide range of switch confi gurations -Form A, 1 Form B, 2 Form A, 1 Form C• Two pole relay requires the same board area as the single pole type• Dry and mercury wetted switches are available with the same pin configuration and footprint.• Many benefits compared to industry standard relays. Learn more here >.• Insulation resistance greater than 10E12 Ohms (1TOhms) for dry Form A devices• 5, 12 and 24 Volt coils are standard, with or without internal diode• 100% tested for dynamic contact resistance
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High 1.80 (51.00) - 12.60 (357.00) Switch Probe
TSP138-FK300-3
Current Rating (Amps): 10Average DC Resistance lower than (mOhm): 20Test Center (mil): 138Test Center (mm): 3.50Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,760Overall Length (mm): 44.70Switch Point (mil): 67Switch Point (mm): 1.70
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High 1.80 (51.00) - 12.60 (357.00) Switch Probe
TSP138-C180-3
Current Rating (Amps): 10Average DC Resistance lower than (mOhm): 20Test Center (mil): 138Test Center (mm): 3.50Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,760Overall Length (mm): 44.70Switch Point (mil): 67Switch Point (mm): 1.70
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High 1.80 (51.00) - 12.60 (357.00) Switch Probe
TSP138-F300-3
Current Rating (Amps): 10Average DC Resistance lower than (mOhm): 20Test Center (mil): 138Test Center (mm): 3.50Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,760Overall Length (mm): 44.70Switch Point (mil): 67Switch Point (mm): 1.70
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High 1.80 (51.00) - 12.60 (357.00) Switch Probe
TSP138-H230-3
Current Rating (Amps): 10Average DC Resistance lower than (mOhm): 20Test Center (mil): 138Test Center (mm): 3.50Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,760Overall Length (mm): 44.70Switch Point (mil): 67Switch Point (mm): 1.70
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High 1.80 (51.00) - 12.60 (357.00) Switch Probe
TSP138-H100-3
Current Rating (Amps): 10Average DC Resistance lower than (mOhm): 20Test Center (mil): 138Test Center (mm): 3.50Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,760Overall Length (mm): 44.70Switch Point (mil): 67Switch Point (mm): 1.70
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High 1.80 (51.00) - 12.60 (357.00) Switch Probe
TSP138-FK230-3
Current Rating (Amps): 10Average DC Resistance lower than (mOhm): 20Test Center (mil): 138Test Center (mm): 3.50Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,760Overall Length (mm): 44.70Switch Point (mil): 67Switch Point (mm): 1.70
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High 1.80 (51.00) - 12.60 (357.00) Switch Probe
TSP138-FK400-3
Current Rating (Amps): 10Average DC Resistance lower than (mOhm): 20Test Center (mil): 138Test Center (mm): 3.50Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,760Overall Length (mm): 44.70Switch Point (mil): 67Switch Point (mm): 1.70
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High 2.90 (82.20) - 12.60 (357.00) Switch Probe
TSP100-J100-3
Current Rating (Amps): 5Average DC Resistance lower than (mOhm): 20Test Center (mil): 100Test Center (mm): 2.54Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,990Overall Length (mm): 50.60Switch Point (mil): 59Switch Point (mm): 1.50
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High 2.90 (82.20) - 12.60 (357.00) Switch Probe
TSP100-H180-3
Current Rating (Amps): 5Average DC Resistance lower than (mOhm): 20Test Center (mil): 100Test Center (mm): 2.54Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,990Overall Length (mm): 50.60Switch Point (mil): 59Switch Point (mm): 1.50
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High 2.90 (82.20) - 12.60 (357.00) Switch Probe
TSP100-H150-3
Current Rating (Amps): 5Average DC Resistance lower than (mOhm): 20Test Center (mil): 100Test Center (mm): 2.54Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,990Overall Length (mm): 50.60Switch Point (mil): 59Switch Point (mm): 1.50
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High 2.90 (82.20) - 12.60 (357.00) Switch Probe
TSP100-F180-3
Current Rating (Amps): 5Average DC Resistance lower than (mOhm): 20Test Center (mil): 100Test Center (mm): 2.54Full Travel (mil): 197Full Travel (mm): 5.00Recommended Travel (mil): 157Recommended Travel (mm): 4.00Overall Length (mil): 1,990Overall Length (mm): 50.60Switch Point (mil): 59Switch Point (mm): 1.50
