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Photodiode
convert's light into current.
See Also: Diode, Laser Diode, Zener Diode, Diode Test, Photodiode Arrays
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Photodiode
A high sensitivity receiver in a fiber pigtail coupled package, it includes a high speed InGaAs avalanche photodiode with a high gain TIA in a hermetically sealed coaxial package. It incorporates an LC/UPC pigtail and a flexible printed circuit (FPC). The signal GND and a receptacle are electrically isolated in this APD receiver.
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Photodiodes
Opto Diode manufactures high quality standard and custom photodiodes. Our wide range of standard device feature low dark current and low capacitance. The silicon detectors are ideal for general purpose applications, laser monitoring, position sensing, measuring photons, electrons, or X-rays, or for detecting sun and rain applications. The devices operate from the deep UV to the near-infrared wavelengths.
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Photodiodes
Avalanche
Similar to photomultipliers, avalanche photodiodes are used to detect extremely weak light intensities. Si APDs are used in the wavelength range from 250 to 1100 nm, and InGaAs is used as semiconductor material in APDs for the wavelength range from 1100 to 1700 nm.
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Photodiodes
Photodiodes are a type of detector, devices that generate an electrical signal when illuminated by light. ACP offers a variety of different types of photodiodes, including InGaAs PIN photodiodes.
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Avalanche Photodiodes
These avalanche photodiodes (APDs) are silicon photodiodes with an internal gain mechanism. As with a conventional photodiode, absorption of incident photons creates electron-hole pairs. A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization. The resulting electron avalanche can produce gain factors up to several hundred.
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Avalanche Photodiodes
Excelitas offers Avalanche Photodiodes (APDs) on both Silicon (Si) and InGaAs materials. Si APDs cover the spectral range of 400 nm to 1100 nm and the InGaAs APDs cover 950 nm to 1550 nm. An Avalanche Photodiode (APD) provides higher sensitivity than a standard photodiode and is for extreme low-level light (LLL) detection and photon counting.
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Photodiodes & Arrays
Excelitas utilizes Silicon and InGaAs materials for our photodiodes to provide detection from 220 nm to 1700 nm. These devices are offered in a variety of sizes to meet customer sensitivity and speed requirements. Many different types of photodiodes are available to serve various unique applications.
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PIN Photodiode
PIN photodiode is a kind of photo detector, it can convert optical signals into electrical signals.This technology was invented in the latest of 1950's. There are three regions in this type of diode. There is a p-region an intrinsic region and an n-region. The p-region and n-region are comparatively heavily doped than the p-region and n-region of usual p-n diodes. The width of the intrinsic region should be larger than the space charge width of a normal p-n junction. The PIN photo diode operates with an applied reverse bias voltage and when the reverse bias is applied, the space charge region must cover the intrinsic region completely. Electron hole pairs are generated in the space charge region by photon absorption. The switching speed of frequency response of photo diode is inversely proportional to the life time. The switching speed can be enhanced by a small minority carrier lifetime. For the photo detector applications where the speed of response is important, the depletion region width should be made as large as possible for small minority carrier lifetime as a result the switch speed also increases.
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Transducers For Photodiodes
Photodiodes convert incoming electromagnetic radiation into electrical charge carriers. If photodiodes are short circuited an electrical current (photocurrent) proportional to the incident radiation intensity (number of photons per second) is induced. These photocurrents are generally small and cover the range from femtoampere (fA) to microampere (µA). Signal transducers transform this weak photocurrent to robust standard signals for reliable data transmission and simple data acquisition.
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UV Photodiodes
Active area from 0.06 mm² to 36 mm² and quadrant photodiodes for position detections. Spectral response for broadband UV or filtered for UVA, UVB, UVC or UV-Index. Various entrance optics and housings options available (TO or SMD). Our own SiC photodiode chip production since 2009 also available with VUV sensitivity. PTB (German equivalent of NIST or NPL) measured high radiation hardness. 350°C high temperature stable photodiodes available. Photodiode application guide.
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10G APD Photodiodes
Macom Technology Solutions Holdings Inc.
MACOM offers the highest sensitivity avalanche photodiodes (APD) on the market to satisfy 10Gtelecom and datacom applications. Both front-illuminated and back-illuminated chips are available and usable from 1250 to 1650 nm for bit rates up to 11.3 Gb/s. Proprietary designs enable superior bandwidth, excellent temperature stability and high reliability to support market needs.
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25G APD Photodiodes
Macom Technology Solutions Holdings Inc.
MACOM offers the highest sensitivity avalanche photodiodes (APD) on the market to satisfy 28G related applications. The chips are usable from 1250 to 1650 nm for bit rates up to 28 Gb/s and 28 GBd. Proprietary designs enable superior bandwidth, excellent temperature stability and high reliability to support market needs of PAM-4 and 400G Ethernet applications.
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*Laser Photodiode Sensors
Photodiode sensors have a high degree of linearity over a large range of light power levels: from fractions of a nanowatt to about 2 mW. Above that light level, corresponding to a current of about 1 mA, the sensor saturates and reads erroneously low. Therefore, most Ophir PD sensors have a built-in and removable attenuator allows measurement of up to 3 W without saturation.
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OSI Optoelectronics Photodiodes
Semiconductor devices used for the detection of light from the ultra-violet to the near-IR regions (200nm – 1100nm).
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*Photodiode Energy Sensors
Ophir photodiode laser energy sensors are able to measure low energy pulses down to 10pJ at frequencies up to 20 kHz. Silicon photodiodes for the UV and visible spectrum and Germanium photodiodes for infrared.
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Pyranometer with Silicon Photodiode
LP471SILICONPYRA
Pyranometer with silicon photodiade for GLOBAL SOLAR IRRADIANCE measurement.
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16-element Si photodiode array
S12362-321
The S12362/S12363 series is a back-illuminated type 16-element photodiode array specifi cally designed for non-destructive X-ray inspection. These are modified versions of our previous products (S11212 series: 1.575 mm pitch). The pitch has been changed to 2.5 mm. The back-illuminated photodiode array is also simple to handle and easily couples to scintillators without having to worry about wire damage because there are no bonding wires and photosensitive areas on the back side.
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50/100G PAM4 Pin Photodiodes
Macom Technology Solutions Holdings Inc.
MACOM offers high sensitivity PIN photodiodes with industry leading performance at speeds of 56Gbd / 100G. Proprietary designs enable operation using PAM4 modulation protocols in 50 /100G applications. The high responsivity designs have high reliability and are suitable for use in both tele-communications and datacenter networks. The high bandwidth PIN photodetectors are available in a back illuminated design (highest performance), a front illuminated design (more cost effective) and in both singlet and array form factors
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Fiber Photodiode Power Sensors
These interfaces provide communication between an attached sensor and a PC or other external control unit. They are designed to be controlled via an external device or operated autonomously using the analog output; there are no controls or display screens.
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Photodiode Burn-in Reliability Test System
58606
The Chroma 58606 PD/APD Burn-in system is a high density, multifunction and temperature controlled module based system for photo diode burn-in and lifetime test. Each module has up to 256 Source Measurement Unit channels which can source current and measure voltage in various scenarios such as one described below. The system can accommodate 7 modules for a total of 1,792 device channels.
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Full Range Photodiode Array UV-VIS-NIR-SWIRLaboratory Spectroradiometers
The SR-Series of full range laboratory spectroradiometers is ideal for a wide range of applications, including:*Solar radiance and irradiance measurements*Solar simulator test and classification*LED, laser, light source metrology*Radiometric calibration transfer*Remote sensing applications
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Ultra-Low Noise 2 kHz Photoreceiver w/ Si-PIN Photodiode
PWPR-2K-SI
Picowatt Photoreceiver series PWPR-2K with switchable gain (10 to the 9th V/A, 10 to the 10th V/A) and a bandwidth from DC to 2 kHz is the perfect choice for cw-measurements, time resolved signal acquisitions and highly sensitive modulated measurements. Si and InGaAs models cover the wavelength range from 320 to 1700 nm.
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10G APD Photoreceivers
Macom Technology Solutions Holdings Inc.
MACOM offers high-sensitivity avalanche photodiode (APD) based photoreceivers in a variety of packages, including ROSA, OEM module and instrument-style. A wide range of 10G solutions are available with both multimode and single-mode fiber-coupled products.
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10G Pin Photoreceivers
Macom Technology Solutions Holdings Inc.
MACOM offers PIN photodiode based photoreceivers in a variety of packages, including OEM module and instrument-style. A wide range of 10G solutions are available for applications up to 15 Gb/s covering 800-1650 nm wavelengths.
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2D CMOS Image Sensor
Lince5M
Lince5M is a digital high speed image sensor designed for excellent performance in a large variety of applications, ranging from low noise high dynamic range surveillance to high speed high resolution machine vision.Lince5M incorporates a high speed 5.2M CMOS active pixel image sensor providing global electronic shutter and High Dynamic Range (HDR) features.The sensor array utilises active CMOS pixels with pinned photodiodes to deliver high image quality whilst maintaining the size, cost, and integration advantages of CMOS process.
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2D CMOS Image Sensor
Lince6M5
Lince6M5 is a single chip, fully digital, high speed CMOS active pixel sensor which is designed for maximum flexibility. It has excellent performance in a large variety of applications, ranging from low noise, high dynamic range surveillance, to high speed slow motion analysis, including high resolution machine vision applications. Lince6M5 incorporates a high speed 6.5MP CMOS active pixel image sensor providing both global and rolling electronic shutter, as well as High Dynamic Range (HDR) features. The sensor array utilizes active CMOS pixels with pinned photodiodes to deliver high image quality whilst maintaining the size, cost, and integration advantage of the CMOS technology.
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2x8 Coherent Mixer With Single-ended Photodetectors
This page defines the requirement of a special coherent receiver with 8 single-ended photodiode outputs, per customer request. The coherent mixer, consisting of two polarization-diversified 90deg optical hybrids, a polarizing beam splitter and a beam splitter, is exactly same as existing DP-QPSK coherent mixer, and therefore offering same optical performance.
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350 MHz Preamplifier
SIM914
Stanford Research Systems, Inc.
The SIM914 350 MHz Preamplifier contains two wide-bandwidth, DC-coupled amplifiers, each with a gain of 5 (14 dB). Its fast rise time, low noise and excellent DC accuracy make it an ideal instrument for amplifying signals like those from photomultiplier tubes and photodiodes.
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40Gb/s DQPSK Receiver
The integrated DQPSK receiver incorporates an optical phase demodulator (delay-line interferometer or DLI) with 2 pairs of balanced photo-diodes and 2 linear TIAs into a single butterfly package. Compared with the currently available discrete solution in which a separate DLI and a separate receiver are used, the integrated DQPSK receiver eliminates labor intensive fiber routing and coupling (between the DLI and the balanced receiver) as well as the skew control. Moreover, the integrated DQPSK receiver offers a smaller footprint suitable for today’s demanding high speed transponder applications.
